Changjiang Storage Launches First Patent Challenge Against Micron in China

Dec 8, 2025 | Computers | Ning Jiang

Changjiang Storage Launches First Patent Challenge Against Micron in ChinaAfter years of global patent disputes, Changjiang Storage has for the first time initiated an invalidation challenge in China against Micron Technology, the US‑based memory giant. This marks a significant step in the ongoing competition between Chinese and American semiconductor companies.

Between December 3 and 4, 2025, China's National Intellectual Property Administration disclosed three cases in which Changjiang Storage (Yangtze River Storage) challenged Micron's 3D memory patents. The patents in question involve technologies such as memory arrays with vertically adjacent semiconductor structures, methods for forming three‑dimensional memory, and charge storage devices and systems.

Meanwhile, the US Patent and Trademark Office is conducting a national security review of two invalidation requests filed by Changjiang Storage against Micron's patents in the United States. On November 10, 2025, US authorities asked Changjiang Storage to explain why its applications should still be accepted despite the company being placed on the US entity list.

It is worth noting that Changjiang Storage filed its invalidation challenges in China at the end of September and October, before the United States began its national security review. This suggests the two actions are not directly connected.

Micron has also filed at least eight invalidation challenges in China against Changjiang Storage's patents. However, because China's patent office does not yet have regulations allowing such requests to be refused outright, Micron's challenges remain under review.

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